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 Inchange Semiconductor
Product Specification
Silicon PNP Power Transistors
2SA1513
DESCRIPTION *With TO-3PML package *High current capability *Low collector saturation voltage APPLICATIONS *For high speed and high power switching applications
PINNING PIN 1 2 3 Base Collector Emitter Fig.1 simplified outline (TO-3PML) and symbol DESCRIPTION
*
Maximum absolute ratings(Ta=25)
SYMBOL VCBO VCEO VEBO IC PARAMETER Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current Ta=25 PC Collector power dissipation TC=25 Tj Tstg Junction temperature Storage temperature 60 150 -55~150 Open emitter Open base Open collector CONDITIONS VALUE -100 -60 -6 -15 3.5 W UNIT V V V A
Inchange Semiconductor
Product Specification
Silicon PNP Power Transistors
CHARACTERISTICS
Tj=25 unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN
2SA1513
TYP.
MAX
UNIT
V(BR)CEO
Collector-emitter breakdown voltage
IC=-25mA; IB=0
-60
V
V(BR)EBO VCEsat
Emitter-base breakdown voltage
IE=-1mA; IC=0 IC=-12 A;IB=-0.6 A
-6
V
Collector-emitter saturation voltage
-0.5
V
VBEsat
Base-emitter saturation voltage
IC=-12 A;IB=-0.6 A
-1.5
V A A
ICBO
Collector cut-off current
VCB=-60V; IE=0
-10
IEBO
Emitter cut-off current
VEB=-6V; IC=0
-10
hFE
DC current gain
IC=-3A ; VCE=-2V
100
400
COB fT
Output capacitance
IE=0 ; VCB=-10V;f=1MHz IC=-1.5A ; VCE=-10V
300
pF
Transition frequency
80
MHz
2
Inchange Semiconductor
Product Specification
Silicon PNP Power Transistors
PACKAGE OUTLINE
2SA1513
Fig.2 Outline dimensions
3


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